| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor having a small amount of displacement in a threshold voltage. <P>SOLUTION: A second gate insulating film 17 in contact with a gate electrode 21 of the thin-film transistor 5 and a first interlayer insulating film 22 in contact with the gate electrode 21 are set to be silicon nitride layers. An anodic reaction can be suppressed on the interface between the second gate insulating film 17 and the gate electrode 21. The concentration of hydrogen in the second gate insulating film 17 is made lower than that in the first interlayer insulating film 22. When activation annealing is performed to a source region 14 and a drain region 15 of a polysilicon layer 11, the amount of hydrogen can be reduced in diffusing from the second gate insulating film 17 to a channel region 13 of the polysilicon layer 11. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
