发明名称 |
Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
摘要 |
The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.
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申请公布号 |
US2008023710(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070826874 |
申请日期 |
2007.07.19 |
申请人 |
IOFFE PHYSICO-TECHNICAL INSTITUTE RAS |
发明人 |
PARK HEE S.;VASILIEVICH ZHILYAEV Y.;NIKOLAEVICH BESSOLOV V. |
分类号 |
H01L33/12;C30B25/00;C30B29/38;H01L21/20;H01L33/00;H01L33/32 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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