| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change element with less amount of leak (and resultant short-circuit) even when a resistance changing layer is formed thin, and also to provide a method for manufacturing the same element and a resistance change memory using the same element. <P>SOLUTION: The resistance change element includes a first electrode 11, a second electrode 13, a resistance changing layer 12 laminated between the first electrode 11 and the second electrode 14, and an insulating layer (tunnel barrier layer 14). Thickness of the tunnel barrier layer 14 is 0.5 nm or more and 5 nm or less. The resistance changing layer 12 can change an electrical resistance value among a plurality of states by applying a voltage or a current between the first electrode 11 and the second electrode 13. The resistance changing layer 12 is mainly formed of a transition metal oxide. <P>COPYRIGHT: (C)2008,JPO&INPIT |
