| 摘要 |
PROBLEM TO BE SOLVED: To provide a means to suppress the substrate floating effect while maintaining the size of a semiconductor device and preventing the degradation of integration degree. SOLUTION: A semiconductor device is equipped with a gate insulation film 10 formed on a SOI layer 4, a gate electrode 11, and a source layer 14 and a drain layer 15 formed by diffusing conductive impurities of the type inverse to the SOI layer on the both sides of the gate electrode 11. On the upper layer of the SOI layer under the gate insulation film, there is prepared a channel region 16 formed by diffusing conductive impurities of the same type as the SOI layer with higher density than the SOI layer, and in the source region 14 side of the SOI layer between the channel region 16 and an embedded oxide film 3, there is prepared a low potential layer 18 formed by diffusing conductive impurities of the same type as the channel region with lower density than the channel region contacting the source layer 14 and the channel region 16. COPYRIGHT: (C)2008,JPO&INPIT |
