| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which interface peeling or cracks can be prevented in the vicinity of an edge portion of a re-wiring layer. <P>SOLUTION: The semiconductor layer 1 has a semiconductor substrate 100; a first interlayer insulating film 110 (first insulating film) formed on the semiconductor substrate 100 and having an opening 110a (first opening); a first re-wiring layer 11 formed from a part on the first interlayer insulating film 110 (first insulating film) to the inside of the opening 110a (first opening) and having an uppermost surface of a size smaller than that of a region surrounded by the outer rim of a surface contacting the first interlayer insulating film 110 (first insulating film); and a second interlayer insulating film 120 (second insulating film) formed on a first re-wiring layer 11 and the first interlayer insulating film 110 (first insulating film). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
