METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can prevent remaining of a sidewall and formation of a sub-trench in a bipolar region without increasing the number of steps. SOLUTION: The manufacturing method of a semiconductor device for forming an SiGe-HBT 50 and a CMOS on the same substrate 1 includes a step of forming a DTI 13 for isolating an element into a bipolar region and an CMOS region and a LOCOS layer 15A on the substrate 1, a step of forming a polysilicon film 22 as a material film 22 of a gate electrode of the CMOS on the overall surface of the substrate 1, and a step of patterning the polysilicon film to form a gate electrode on the substrate 1 of the CMOS region. In the step of forming the gate electrode, the polysilicon film 22 is allowed to remain on the substrate 1 so as to cover the entire from the bipolar region to the LOCOS layer 15A in the vicinity of the bipolar region. COPYRIGHT: (C)2008,JPO&INPIT