| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wire extending between multiple layers which can be manufactured with high reliability at a low cost, and to provide its manufacturing method. SOLUTION: The manufacturing method includes steps of covering, with an overlying interlayer insulation film 6, an inductor wire 4 containing Au located above a GaAs substrate 1, and an upper inductor wire layer 5 located on the inductor wire 4 and containing Al with boiling point or sublimation temperature of a compound with F equal to or higher than 300°C. Thereafter, the overlying interlayer insulation film 6 is dry-etched with F-containing gas until the upper wire layer 5 is exposed, and the exposed layer 5 by etching the film 6 is dry-etched with Cl-containing gas. COPYRIGHT: (C)2008,JPO&INPIT
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