| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage capable of reducing the influence of a floating gate that opposes the floating gate of a selected memory cell via an assist gate in reading, and performing accurate reading; and to provide a manufacturing method of the nonvolatile semiconductor storage. SOLUTION: The nonvolatile semiconductor storage comprises: first wiring 102d capable of forming an inverted layer formed on the main surface of a semiconductor substrate 100; second insulation films 103, 105 formed so that the first wiring 102d is covered; first and second charge storage electrodes 107c7, 107c8 formed at both the sides of the second insulation films 103, 105; first and second impurity diffusion layers 109d, 109e adjacent to the first and second charge storage electrodes 107c7, 107c8; and second wiring 117c formed on the charge storage electrodes 107c7, 107c8. The height of a part that opposes the first wiring 102d in the first and second charge storage electrodes 107c, 107c8 is higher than that of a part positioned at the upper portion of the first wiring 102d. COPYRIGHT: (C)2008,JPO&INPIT
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