FET for use in e.g. microelectronic device, has heavily doped source/drain region of substrate arranged beneath pillar and remote from insulated gate

摘要

A pillar (170) extends away from a substrate (100). The pillar includes a base adjacent to the substrate, top remote from the substrate and a sidewall that extends between the base and the top. A lightly doped source/drain region (N-) (320) of the substrate is arranged beneath the pillar and adjacent the insulated gate on the sidewall. A heavily doped source/drain region (N+) (310) of the substrate is arranged beneath the pillar and remote from the insulated gate. An independent claim is included for method of fabricating FET.