发明名称 METHOD FOR PREPARING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PREPARED BY THE METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME
摘要 A method for manufacturing thin film transistors, thin film transistors manufactured by the same, and a liquid crystal display device having the same are provided to form photoresist patterns and form a copper layer in the photoresist patterns to prevent agglomeration of photoresist residue and gate drain shortage by the dispersion of copper. A substrate(210) is prepared. A photoresist layer is formed on the substrate. The photoresist layer is patterned to form photoresist patterns. A lower barrier layer is formed on the substrate in the photoresist patterns. A copper layer is formed on the lower barrier layer in the photoresist patterns. An upper barrier layer is formed on the copper layer in the photoresist patterns. The photoresist patterns are removed to form a gate electrode(201) formed of the lower barrier layer, the copper layer, and the upper barrier layer.
申请公布号 KR20080010957(A) 申请公布日期 2008.01.31
申请号 KR20060071684 申请日期 2006.07.28
申请人 LG CHEM. LTD. 发明人 HAN, HEE;KIM, KYUNG JUN;SEO, SUNG WOO;PARK, MIN CHOON;KWON, HYOK JOON;AHN, KYOUNG HO
分类号 G02F1/136 主分类号 G02F1/136
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