CERIUM OXIDE POWDER, METHOD FOR PREPARING THE SAME, AND CMP SLURRY COMPRISING THE SAME
摘要
<p>Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non- uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.</p>
申请公布号
WO2008013407(A1)
申请公布日期
2008.01.31
申请号
WO2007KR03579
申请日期
2007.07.26
申请人
LG CHEM, LTD.;OH, MYOUNG-HWAN;CHO, SEUNG-BEOM;NHO, JUN-SEOK;KIM, JONG-PIL;KIM, JANG-YUL