SINGLE PRECURSORS FOR ATOMIC LAYER DEPOSITION

摘要

Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: X<SUB>m</SUB>M(OR)<SUB>n </SUB> or X<SUB>p</SUB>M(0<SUB>2</SUB>R')<SUB>q</SUB> where M is Hf, Zr, Ti, A1, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O<SUB>2</SUB>R' are alkoxyl groups with R and R' containing two or more carbon atoms; m + p = 3 to 5; P+2q = 3 to 5; and m, n, p, q ? O. Further precursors have the general formula: (R<SUP>1</SUP>2N)<SUB>m</SUB>M(=NR<SUP>2</SUP>)<SUB>p</SUB> or (R<SUP>3</SUP>CN2R<SUP>4</SUP>2)<SUB>P</SUB>M(=NR<SUP>2</SUP>)<SUB>q</SUB> where M is Hf, Zr, Ti, or Ta; R<SUP>1</SUP> <SUB>2</SUB>N