METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING BURIED GATE ELECTRODE

摘要

Methods for fabricating a semiconductor device having a buried gate electrode are provided to prevent etching damage of a liner nitride film of a device isolation film exposed by a channel trench by having a protection film for protecting the liner nitride film. A method for fabricating a semiconductor device having a buried gate electrode includes the steps of: forming a device isolation film(102) to define active regions(100c,100p) inside a semiconductor substrate(100); forming a mask pattern(116) with an opening portion crossing the active regions on the substrate having the device isolation film; forming a channel trench crossing the active regions by etching the semiconductor substrate and the device isolation film by using the mask pattern as an etching mask; forming a protection film(119) filling the channel trench; removing the mask pattern; and removing the protection film.