| 摘要 |
<p>A non-volatile memory device is provided to increase driving current of a memory transistor through increase in width of an effective channel region of the memory transistor, thereby improving the performance of a memory transistor. A non-volatile memory device includes an element isolating film(12), a sensing line(SL), and a word line(WL). The element isolating film confines an active region(26). The sensing line crosses an upper part of the active region and includes a floating gate(22s) and a control gate electrode(24s). The word line is separated from the sensing line and crosses the upper part of the active region. An active region in a lower part of the word line has a width larger than an active region in a lower part of the sensing line. The width of the active region in the lower part of the word line becomes larger as the active region in the lower part of the word line becomes farther from the sensing line. The active region in the lower part of the word line includes a first region and a second region divided parallel to the word line.</p> |
