NON-VOLATILE MEMORY DEVICES HAVING PASS TRANSISTORS AND METHOD OF OPERATING THE SAME

摘要

A non-volatile memory device including a pass transistor and a method of operating the same are provided to avoid program interference due to the pass transistor because program efficiency is good by F-N tunneling, a program speed is fast, and a random access is available. A non-volatile memory device includes a first bit line(BL1), a second bit line(BL2), a first memory transistor(Tm1), a second memory transistor(Tm2), a first pass transistor, a second pass transistor, a third pass transistor, a third bit line(BL3), and a word line(WL). The first and second bit lines are cross-connected to one string(S). The first and second memory transistors are included in the string between the first and second bit lines. Each of the first memory transistor and the second memory transistor includes control gates(CG1,CG2) and storage nodes(SN1,SN2). The first pass transistor is included in the string between the first bit line and the first memory transistor and includes a first pass gate(PG1). The second pass transistor is included in the string between the second memory transistor and the second bit line and includes a second pass gate(PG2). The third pass transistor is included in the string between the first and second memory transistors and includes a third pass gate(PG3). The third bit line is connected to a channel of the third pass transistor. The word line is commonly connected to the control gates of the first and second memory transistors.