| 摘要 |
The present invention relates to a novel, unconventional methods and syst ems for the fabrication of silicon or silicon-germanium photovoltaic cell ap plications. In some embodiments high purity gaseous and/or liquid intermedia te compounds of silicon (or silicon germanium) are converted directly to pol ycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silico n (or silicon germanium) are injected into the thermal plasma source where t emperatures range from 2000 K to about 20,000 K. The compounds dissociate an d silicon (or silicon germanium) is deposited onto substrates. Polycrystalli ne films having densities approaching the bulk value are obtained on cooling . PN junction photovoltaic cells can be directly prepared by spraying, or do ped films after heat treatment are subsequently transformed to viable photov oltaic cells having high efficiency, low cost at a high throughput. In some embodiments a roll-to-roll or a cluster-tool type automated, continuous syst em is provided.
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