| 摘要 |
<p>A method for manufacturing a semiconductor device using an immersion lithography process is provided to obtain vertical patterns by improving the top loss of a photoresist pattern by neutralizing acid existing on a surface of a resist layer. A method for manufacturing a semiconductor device using an immersion lithography process includes the steps of: forming the resist film on an etched layer of a semiconductor wafer; coating an aqueous solution including a basic compound and a non-ionic surfactant on a surface of the resist film; performing an exposing process by using immersion lithography equipment; baking the product of third step after exposure; and obtaining a desired pattern by developing the product of the fourth step.</p> |
