STACKED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A stack type semiconductor device and a manufacturing method thereof are provided to improve the reliability of the device by having a structure with less electric resistance. A stack type semiconductor device includes a semiconductor substrate(30), a multilayered insulating film pattern(50), an active film(40), a first plug(54), a second plug(53), and a metal wiring(58). The multilayered insulating film pattern is perpendicularly stacked on the semiconductor substrate, and includes at least two interlayer insulating film patterns(38,48) and a chimney-type opening unit(52) which exposes the side surface of the semiconductor substrate. The active film is formed on the interlayer insulating film pattern, and has a side surface exposed by the chimney-type opening unit. The first plug is formed on the semiconductor substrate exposed by the chimney-type opening unit, and includes single crystal silicon-germanium. The second plug has a part remaining on the first plug, and has the same interface with the first plug, and includes single crystal silicon. The metal wiring is electrically connected with the first plug, and fills the chimney-type opening unit.