SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SEMICONDUCTOR DEVICE

摘要

A semiconductor device and a manufacturing method thereof are provided to manufacture a diode or a switch device having high reverse pressure resistance by forming an electric field reducing area without heat treatment. A semiconductor device includes a hetero junction, and an electric field reducing area(5). The hetero junction is formed by a first semiconductor material and a second semiconductor material with the different band gap from that of the first semiconductor material. The electric field reducing area is composed of an impurities introducing area(4) formed on the first semiconductor material contacted with the hetero junction.