发明名称 IMPLANTER
摘要 An ion implanter is provided to maximize a production yield by having a block unit to define the critical dimension of an ion beam expanded in one direction from an expansion unit. An ion implanter includes an ion source(102), a mass analyzer(104), an acceleration unit(106), an expansion unit(108), a block unit(122), and a chuck(120). The ion source generates a predetermined ion beam(100). The mass analyzer extracts the ion beam with predetermined mass from the ion beam. The acceleration unit accelerates the ion beam extracted from the mass analyzer. The expansion unit expands the ion beam accelerated in the acceleration unit in one direction. The block unit defines the critical dimension of the ion beam expanded in one direction from the expansion unit. The chuck grips a wafer vertically to the ion beam passing through the block unit.
申请公布号 KR20080010094(A) 申请公布日期 2008.01.30
申请号 KR20060070126 申请日期 2006.07.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, KYUNG HO;PARK, WOON KI
分类号 H01L21/265;H01L21/425 主分类号 H01L21/265
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