发明名称 |
Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate |
摘要 |
A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14). |
申请公布号 |
GB2440484(A) |
申请公布日期 |
2008.01.30 |
申请号 |
GB20070022572 |
申请日期 |
2007.11.16 |
申请人 |
SUMITOMO CHEMICAL COMPANY LIMITED;NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY |
发明人 |
KAZUMASA HIRAMATSU;HIDETO MIYAKE;YOSHIHIKO TSUCHIDA;NAOHIRO NISHIKAWA |
分类号 |
H01L21/205;H01L33/12;H01L33/32;H01S5/323 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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