| 摘要 |
A nitride based light emitting device is provided to improve inner quantum efficiency by improving the band structure of an active layer through a super lattice layer. A nitride based light emitting device includes a first conductive semiconductor layer(20), a super lattice layer(30), a second conductive semiconductor layer(50), an active layer(60), and a third conductive semiconductor layer(70). The super lattice layer is located on the first conductive semiconductor layer. The second conductive semiconductor layer is located on the super lattice layer. The active layer is located on the second conductive semiconductor layer. The third conductive semiconductor layer is located on the active layer.
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