发明名称 METHOD FOR PRODUCING SILICON
摘要 <p>There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells. There is also provided an industrially advantageous method that removes contaminants from a chlorosilane circulating system which produces trichlorosilane in producing silicon from trichlorosilane by a vapor deposition method.</p>
申请公布号 EP1882675(A1) 申请公布日期 2008.01.30
申请号 EP20060732655 申请日期 2006.05.15
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU, SATORU;ODA, HIROYUKI
分类号 C01B33/03;C01B33/035;H01L31/04 主分类号 C01B33/03
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