发明名称 SEMICONDUCTOR MEMORY APPARATUS
摘要 A semiconductor memory apparatus is provided to prevent an operation error like data loss generated by a sensing line and a reference line influencing on a sense amplifier unsymmetrically, by arranging a column selection part connecting the sensing line and the reference line and a local input/output line pair in order for the sensing line and the reference line to have equal length. According to a semiconductor memory apparatus, a sense amplifier shares one bit line with one cell mat and shares the other bit line with the other cell mat. A first sense amplifier(4) performs sensing of a bit line pair. A second sense amplifier(5) performs sensing of the bit line pair. A cell mat comprises a first cell mat region(110) and a second cell mat region(120), and comprises a column selection part(130). The column selection part connects a local input/output line and a bit line connected to the first sense amplifier and a local input/output line and a bit line connected to the second sense amplifier according to the enable of a column selection signal.
申请公布号 KR20080009852(A) 申请公布日期 2008.01.30
申请号 KR20060069567 申请日期 2006.07.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WON, HYUNG SIK
分类号 G11C11/4091;G11C11/4096 主分类号 G11C11/4091
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