| 摘要 |
<p>A method for forming a metal line of a semiconductor memory device is provided to enhance a process margin of a trench mask by forming a layer to be an etch stop layer with an anti-reflective material such as SiON. A method for forming a metal line of a semiconductor memory device includes the steps of: stacking an interlayer dielectric(101), an etch preventive layer, a trench oxide layer, a hard mask layer, and a photoresist layer on a semiconductor substrate(100) with a contact connected to a source or a drain region; forming a photoresist pattern by partially exposing and etching the hard mask layer; forming a damascene trench by partially etching the trench oxide layer, the etch preventive layer, and the interlayer dielectric in sequence; and forming a metal line by a CMP(Chemical Mechanical Planarization) process after forming a metal material on a whole structure including the trench. The etch preventive layer is made of ARC(Anti-Reflective Coating) material to prevent diffused reflection of exposure energy.</p> |
