| 摘要 |
A nitride based light emitting device is provided to reduce driving voltage and improving light emitting efficiency by smoothly flowing a carrier on the interface with an active layer. A nitride based light emitting device includes an n-type semiconductor layer(60), a p-type semiconductor layer(70), an active layer(30), a first layer(10), and a second layer(20). The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer, and is composed of at least one pair of well layers and barrier layers. The first layer is located on at least one interface between the n-type semiconductor layer and the active layer, and between the p-type semiconductor layer and the active layer, and is composed of a plurality of layers(11,12,13) with variable thickness and band-gap. The second layer is formed between the plurality of first layers.
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