LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DENSITIES AND RELATED METHODS FOR DEVICE FABRICATION
摘要
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
申请公布号
EP1882268(A2)
申请公布日期
2008.01.30
申请号
EP20060770525
申请日期
2006.05.17
申请人
AMBERWAVE SYSTEMS CORPORATION
发明人
CHENG, ZHIYUAN;CURRIE, MATTHEW, T.;LOCHTEFELD, ANTHONY J.;FIORENZA, JAMES;LANGDO, THOMAS A.;BRAITHWAITE, GLYN