| 摘要 |
When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.
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