Run-to-run control method for automated control of metal deposition processes

摘要

A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of deposition plasma power and deposition time. The method also comprises applying the deposition rate model to modify the metal deposition processing to form the metal layer to have a desired thickness.