| 摘要 |
A process of modifiying a solid's surface, comprising a first step of depositing hydrogenated armophous silicon on the surface by thermal decomposition at an elevated temperature of silicon hydride gas to form sila ne radicals which recombine to coat the surface with hydrogenated armophous silicon. A second step of surface funtionalization of the hydrogenated armophous silicon in the presence of a binding agent including hydrosilylation, disproportionation and radical quenching. |
