Ferroelectric Random Access Memory and method for fabricating the same,申请号KR20010087669-传众专利搜索

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发明名称	Ferroelectric Random Access Memory and method for fabricating the same
摘要
申请公布号	KR100798801(B1)	申请公布日期	2008.01.29
申请号	KR20010087669	申请日期	2001.12.29
申请人		发明人
分类号	H01L27/105;(IPC1-7):H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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