发明名称 |
Memory device and method of operating the same with high rejection of the noise on the high-voltage supply line |
摘要 |
A memory device has an array of memory cells. A column decoder is configured to address the memory cells. A charge-pump supply circuit generates a boosted supply voltage for the column decoder. A connecting stage is arranged between the supply circuit and the column decoder. The connecting stage switches between a high-impedance state and a low-impedance state, and is configured to switch into the high-impedance state in given operating conditions of the memory device, in particular during a reading step.
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申请公布号 |
US7324379(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20050241729 |
申请日期 |
2005.09.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
DEL GATTO NICOLA;MOLLICHELLI MASSIMILIANO;SCOTTI MASSIMILIANO;SFORZIN MARCO |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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