发明名称 |
Forming high-k dielectric layers on smooth substrates |
摘要 |
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
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申请公布号 |
US7323423(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20040882734 |
申请日期 |
2004.06.30 |
申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;DATTA SUMAN;SHAH UDAY;DEWEY GILBERT;CHAU ROBERT S. |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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