High-temperature superconductive device

摘要

A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer ( 5 ) that defines the size of the ramp-edge junction and a second electrode layer ( 6 ). The width of the second electrode layer ( 6 ) is greater than the width of the first electrode layer ( 5 ). The first electrode layer ( 5 ) and the second electrode layer ( 6 ) touch in part, and are separated via a first insulation layer ( 7 ) in remaining part. Because the ramp-edge junction includes the first electrode layer ( 5 ) and the second electrode layer ( 6 ), the inductance of the ramp-edge junction can be reduced with the critical current density J_c being kept at a high level.