| 摘要 |
A method for manufacturing a semiconductor device is provided to enhance the characteristic of elements by preventing an inter diffusion phenomenon between gate polysilicon layers. An element isolation layer(120) for defining an active region is formed on a semiconductor substrate. A recess is formed by etching the semiconductor substrate in a predetermined depth. A gate oxide layer is formed in the recess and then a gate polysilicon layer for filling the recess is formed. An N-type source/drain region(150a) is formed while executing N-type dopant injection on a gate polysilicon layer of an NMOS(N-channel Metal Oxide Semiconductor) region. A P-type source/drain region(150b) is formed while executing P-type dopant injection on a gate polysilicon layer of a P(P-ch)MOS region. A gate metal layer and a gate hard mask layer are formed and then a gate pattern is formed by etching.
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