摘要 |
<p>A silicon oxide film is formed by performing a plasma oxidation process comprising a step for performing a first plasma oxidation on a structure having a silicon layer and a high-melting-point metal-containing layer by using a processing gas containing at least a hydrogen gas and an oxygen gas at a processing pressure of 1.33-66.67 Pa, and a step for performing a second plasma oxidation after the first plasma oxidation by using a processing gas containing at least a hydrogen gas and an oxygen gas at a processing pressure of 133.3-1333 Pa.</p> |