发明名称 |
Method of producing element separation structure |
摘要 |
A method of producing an element separation structure includes the steps of: forming a first thermal oxide film on the substrate; forming a silicon nitride film on the first thermal oxide film; removing the first thermal oxide film and the silicon nitride film in an element separation structure forming region; forming a groove portion in the element separation structure forming region; forming a groove portion oxide film in the groove portion; forming a pre-filling oxide film for filling the groove portion; removing the pre-filling oxide film; forming a resist layer on the silicon nitride film and the pre-filling oxide film; forming a resist mask on the element separation structure forming region; removing the silicon nitride film and the first thermal oxide film; forming a second thermal oxide film on the substrate; and removing the second thermal oxide film and leveling the pre-filling oxide film to form a filling portion.
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申请公布号 |
US7323394(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20050226412 |
申请日期 |
2005.09.15 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
IINUMA TAIKAN |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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