发明名称 |
MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance |
摘要 |
An MRAM array having enhanced magnetoresistance includes a spin filtering element connected by a spin hold element to the MRAM cell structures. A spin filtering element may serve several MRAM cell structures, by connecting the spin filtering element to a series of MRAM cell structures by a spin hold wire, or a spin filtering element and a spin hold element may be formed as adjacent layers in each MRAM cell stack.
|
申请公布号 |
US7323732(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20040791911 |
申请日期 |
2004.03.03 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;LUNG HSIANG-LAN |
分类号 |
H01L29/76;G11C11/00 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|