发明名称 |
GROUP III NITRIDE WHITE LIGHT EMITTING DIODE |
摘要 |
A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple InxGa1-xN/InyGa1-y N quantum wells (QWs) by introducing bursts of at least one of Trimethylindium (TMIn), Triethylindium (TEIn) and Ethyldimethylindium (EDMIn), which serve as nuclei for the growth of QDs in QWs. The diode can thus radiate white light ranging form 400nm to 750nm by adjusting the In burst parameters.
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申请公布号 |
KR20080009690(A) |
申请公布日期 |
2008.01.29 |
申请号 |
KR20077023857 |
申请日期 |
2007.10.17 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
CHUA SOO JIN;CHEN PENG;TAKASUKA EIRYO |
分类号 |
H01L33/06;H01L33/04 |
主分类号 |
H01L33/06 |
代理机构 |
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