| 摘要 |
A metal line and a method for forming the same are provided to prevent overhang by executing uniformly deposition on an insulation layer using TiSiN. A trench where a metal line is implanted is formed on an insulation layer(22). A metal barrier layer(30) of TiSiN is formed on the insulation layer and in the trench. A TiN layer is formed on the trench using a CVD(Chemical Vapor Deposition) technique. By reacting SiH4 gas on the TiN layer, a TiSiN layer is formed. A metal line is implanted into the trench with the metal barrier layer. Planarization is then executed on the metal line.
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