发明名称 Piezoelectric thin film element
摘要 A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (Na<SUB>x</SUB>K<SUB>y</SUB>Li<SUB>z</SUB>)NbO<SUB>3 </SUB>(0<x<1, 0<y<1, 0<=z<1, x+y+z=1), and a high voltage-withstand dielectric that has a dielectric strength voltage greater than that of the dielectric thin film.
申请公布号 US7323806(B2) 申请公布日期 2008.01.29
申请号 US20050316675 申请日期 2005.12.23
申请人 HITACHI CABLE, LTD. 发明人 SHIBATA KENJI;SATO HIDEKI
分类号 H01L41/08;B41J2/045;H01L41/16;H01L41/18;H01L41/187;H01L41/24 主分类号 H01L41/08
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