发明名称 |
Electrical interconnection structure formation |
摘要 |
An electrical interconnection structure and method for forming. The electrical structure comprises a substrate comprising electrically conductive pads and a first dielectric layer over the substrate and the electrically conductive pads. The first dielectric layer comprises vias. A metallic layer is formed over the first dielectric layer and within the vias. A second dielectric layer is formed over the metallic layer. A ball limiting metallization layer is formed within the vias. A photoresist layer is formed over a surface of the ball limiting metallization layer. A first solder ball is formed within a first opening in the photoresist layer and a second solder ball is formed within a second opening in the photoresist layer.
|
申请公布号 |
US7323780(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20050164107 |
申请日期 |
2005.11.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAUBENSPECK TIMOTHY H.;GAMBINO JEFFREY P.;MUZZY CHRISTOPHER D.;SAUTER WOLFGANG |
分类号 |
H01L23/52;H01L23/44 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|