发明名称 Electrical interconnection structure formation
摘要 An electrical interconnection structure and method for forming. The electrical structure comprises a substrate comprising electrically conductive pads and a first dielectric layer over the substrate and the electrically conductive pads. The first dielectric layer comprises vias. A metallic layer is formed over the first dielectric layer and within the vias. A second dielectric layer is formed over the metallic layer. A ball limiting metallization layer is formed within the vias. A photoresist layer is formed over a surface of the ball limiting metallization layer. A first solder ball is formed within a first opening in the photoresist layer and a second solder ball is formed within a second opening in the photoresist layer.
申请公布号 US7323780(B2) 申请公布日期 2008.01.29
申请号 US20050164107 申请日期 2005.11.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAUBENSPECK TIMOTHY H.;GAMBINO JEFFREY P.;MUZZY CHRISTOPHER D.;SAUTER WOLFGANG
分类号 H01L23/52;H01L23/44 主分类号 H01L23/52
代理机构 代理人
主权项
地址