| 摘要 |
A semiconductor device with a plurality of passive components ( 7,7 a, 8,8 a) comprising a bottom substrate ( 1 ), a buried oxide layer ( 2 ) on a portion of the top surface of the bottom substrate ( 1 ), an dielectric intermediate insulating layer ( 3 ) on a portion of the buried oxide layer ( 2 ), a dielectric top insulating layer ( 4 ), and at least one implanted passive component ( 7 a, 8 a) of a semiconductor material implanted under the buried oxide layer ( 2 ) within the top surface portion of the bottom substrate ( 1 ), the implanted semiconductor material having a material polarity being opposite to the bottom substrate polarity. When the implanted passive component ( 7 a) is an AC decoupling capacitor ( 7 a), the bottom and side portions of the implanted semiconductor material are surrounded by a depletion layer ( 7 b) of a semiconductor material implanted between said bottom substrate ( 1 ) and said implanted semiconductor material.
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