发明名称 Method for manufacturing granular silicon crystal
摘要 In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
申请公布号 US7323047(B2) 申请公布日期 2008.01.29
申请号 US20060387624 申请日期 2006.03.22
申请人 KYOCERA CORPORATION 发明人 SUGAWARA SHIN;TAKAHASHI EIGO;KITAHARA NOBUYUKI;MIURA YOSHIO;ARIMUNE HISAO
分类号 C30B15/20 主分类号 C30B15/20
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