发明名称 |
Solid state imaging device and method for producing the same |
摘要 |
On a light shielding film 7 , an anti-oxidation layer 9 covering at least the light shielding film 7 is formed. The anti-oxidation layer 9 is formed under a condition which does not oxidize a surface of the light shielding film 7 . The anti-oxidation layer 9 is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film 7 can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film 7 is not oxidized, the thickness of the light shielding film 7 can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.
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申请公布号 |
US7323758(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20050080418 |
申请日期 |
2005.03.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NIISOE NAOTO;OGATA HIROE;NISHIO RIEKO;YANO TOSHIHIKO;DOI HITOSHI |
分类号 |
H01L31/062;H01L27/14;H01L27/148;H04N5/335;H04N5/365;H04N5/369;H04N5/372 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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