发明名称 |
Long wavelength vertical cavity surface emitting laser with monolithically grown photodetector |
摘要 |
A long wavelength vertical cavity surface emitting laser (VCSEL) with a monolithically-grown photodetector is provided. The photodetector is installed in a middle portion of or on a bottom surface of a lower distributed Bragg reflector of the long wavelength VCSEL. The photodetector is integrated with the long wavelength VCSEL. A substrate on which the long wavelength VCSEL and the photodetector are crystal-grown does not absorb a laser beam emitted from the long wavelength VCSEL. Thus, the laser beam heading toward the substrate is accurately detected, and the gain of the laser beam is effectively controlled.
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申请公布号 |
US7324574(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20040846521 |
申请日期 |
2004.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM TAEK |
分类号 |
G11B7/125;H01S5/00;H01S3/08;H01S5/026;H01S5/183;H01S5/343 |
主分类号 |
G11B7/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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