发明名称 |
Process for depositing a layer of material on a substrate |
摘要 |
An electroplating system ( 30 ) and process makes electrical current density across a semiconductor device substrate ( 20 ) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers ( 364 and 37 ) reduce the electrical current density near the edge of the substrate ( 20 ). By reducing the current density near the edge of the substrate ( 20 ), the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate ( 20 ). The system can also be modified so that the material that plates on electrical current density modifier portions ( 364 ) of structures ( 36 ) can be removed without having to disassemble any portion of the head ( 35 ) or otherwise remove the structures ( 36 ) from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.
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申请公布号 |
US7323094(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20020218810 |
申请日期 |
2002.08.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SIMPSON CINDY REIDSEMA;HERRICK MATTHEW T.;ETHERINGTON GREGORY S.;LEGG JAMES DEREK |
分类号 |
C25D5/48;C25D7/00;C25D5/00;C25D7/12;C25D17/00;C25D21/00;H01L21/288 |
主分类号 |
C25D5/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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