发明名称 |
FOCUS TEST MASK, FOCUS MEASUREMENT METHOD AND EXPOSURE APPARATUS |
摘要 |
A focus test mask is provided with a test pattern that is projected onto a wafer (W) via a projection optical system (PL). This test pattern includes: a plurality of line patterns (12a to 12f) that are lined up in a direction of measurement; phase shift sections (13) that are provided in areas adjacent to each of the plurality of line patterns and that are used to shift the phase of light passing through; and reference patterns (11a to 11d) that are used to obtain an image that forms a reference when the shift in the line pattern image is measured. Spaces between the plurality of line patterns are set at a size that allows each line pattern to be regarded as equivalent to being isolated lines. |
申请公布号 |
SG138616(A1) |
申请公布日期 |
2008.01.28 |
申请号 |
SG20070188378 |
申请日期 |
2004.07.01 |
申请人 |
NIKON CORPORATION |
发明人 |
KONDO SHINJIRO |
分类号 |
G03F1/00;G03F7/20;G03F7/207 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|