| 摘要 |
<p>Disclosed is a semiconductor device comprising a bit line (14) embedded in a semiconductor substrate (10), a first wiring (24) formed on and connected to the bit line, and a second wiring (30) formed on the first wiring for connecting the first wiring with a transistor in a peripheral circuit region. In this semiconductor device, the first wiring is connected with the transistor in the peripheral circuit region only through the second wiring. Also disclosed is a method for manufacturing such a semiconductor device. Further disclosed are a semiconductor device comprising a first wiring connecting a bit line with a transistor in a peripheral circuit region and a dummy contact hole (44) located between the bit line and the transistor, and a method for manufacturing such a semiconductor device. The present invention enables to provide a highly reliable flash memory wherein loss of electric charge from an ONO film (12) is suppressed.</p> |
