| 摘要 |
A metal wire and a forming method thereof are provided to improve electrical characteristic of a semiconductor device and an image sensor by forming a spacer made of an insulating layer at a side of the metal wire and a metallic diffusion preventing layer on an upper surface thereof. A base interlayer dielectric(10) on which a lower metal wire(20) is formed, and a diffusion preventing layer(11) are formed. A first interlayer dielectric is formed on the diffusion preventing layer. A first interlayer dielectric pattern(30) having a trench and a via hole is formed. The trench and the via hole pass through the first interlayer dielectric and the diffusion preventing layer. Metal wires(40) are formed in the trench and a contact hole. The upper portion of the first interlayer dielectric pattern is etched to expose the upper portion of the metal wire. A nitride silicon layer is deposited on the entire surface of the first interlayer dielectric pattern. The nitride silicon layer is etched to form a spacer(51) at both sides of the exposed metal wire. A metallic diffusion preventing layer is formed on the metal wire on which the spacer is formed. |
